Development of multi-beam gas cluster ion beam equipment for high quality ITO film formation at low temperatures

Author

Minami, E. ; Qin, W. ; Akizuki, M. ; Kastumata, H. ; Matsuo, J. ; Yamada, I.

Author_Institution

Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan

Volume

2

fYear

1999

fDate

36495

Firstpage

1191

Abstract

The O₂ gas cluster ion beam assisted deposition technique has been developed to form high quality ITO films at ambient temperature. We have obtained high quality ITO films with a resistivity lower than 3.0×10^-4 Ω·cm and transparency higher than 80% at room temperature. However, for application in industry, it is necessary to increase the cluster ion beam current to deposit films on a large area and to realize high throughput. A Multi-beam Gas Cluster Ion Beam equipment has been newly developed to increase the cluster ion beam current and to obtain higher quality ITO films at low temperatures. We report on new concepts of the Multi-beam gas cluster ion beam apparatus and experimental results of the formation of ITO films prepared by gas cluster ion beam assisted deposition technique

Keywords

electrical resistivity; indium compounds; ion beam assisted deposition; semiconductor growth; semiconductor materials; semiconductor thin films; tin compounds; transparency; 20 C; 3E-4 ohmcm; ITO; InSnO; O₂ gas cluster ion beam assisted deposition; ambient temperature; cluster ion beam current; high quality ITO film formation; high quality ITO films; high throughput; large area; low temperatures; multi-beam gas cluster ion beam equipment; resistivity; room temperature; transparency; Atomic layer deposition; Conductivity; Electrodes; Indium tin oxide; Ion beams; Optical films; Optical filters; Optoelectronic devices; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813897

Filename

813897