Prediction of RF interference in operational amplifiers by a new analytical model

Author

Fiori, Franco ; Crovetti, Paolo S. ; Pozzolo, Vincenzo

Author_Institution

Dipt. di Elettronica, Politecnico di Torino, Italy

Volume

2

fYear

2001

fDate

2001

Firstpage

1164

Abstract

The effect of radiofrequency interference (RFI) in MOS and BJT operational amplifiers (op-amps) is dealt with; in order to obtain analytical expressions which can be useful for design purposes, a second order circuit analysis has been performed. This approach grants a good insight in the nonlinear mechanisms involved in the RFI induced DC offset shift in opamps and relates this behavior to design parameters and parasitics. The validity of the proposed model is discussed comparing theoretical prediction and computer simulation results

Keywords

network analysis; operational amplifiers; radiofrequency interference; BJT operational amplifiers; MOS operational amplifiers; RFI induced DC offset shift; RFI-induced differential current shift; computer simulation; design parameters; nonlinear mechanisms; parasitics; radiofrequency interference prediction; second order circuit analysis; Analytical models; Circuits; Computer simulation; Electromagnetic interference; Operational amplifiers; Performance analysis; Radio frequency; Radiofrequency amplifiers; Radiofrequency interference; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2001. EMC. 2001 IEEE International Symposium on

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-6569-0

Type

conf

DOI

10.1109/ISEMC.2001.950591

Filename

950591