Photoresist integrity and outgassing effects during plasma immersion ion implantation

Author

Bernstein, James D. ; Whiteside, Donna M. ; Rendon, Michael J.

Author_Institution

Semicond. Equip. Div., Eaton Corp., Beverly, MA, USA

Volume

2

fYear

1999

fDate

36495

Firstpage

1207

Abstract

Plasma immersion ion implantation (PIII) has been evaluated for process compatibility with photoresists. The effects of non-mass-separated ion implantation into bare Si, soft-baked (SE), hardbaked (HE), and UV/baked (UVB) patterned photoresist wafers are discussed. Outgassing of the photoresist can cause co-implantation of unintended species since the plasma will ionize these by-products. SIMS analysis was used to characterize dopant profiles and implanted C, O, and N from outgassed photoresist species. Acceptable levels of carbon are shown for a range of implants. Correlation between RGA and SIMS data shows that UVB photoresist outgasses increased amounts of CO and CO₂ during PIII implantation compared to the SB and HB photoresist. The PIII implants showed no damage to photoresist features or dimensions, as quantified with SEM cross-sectional analysis

Keywords

doping profiles; elemental semiconductors; impurity distribution; ion implantation; outgassing; photoresists; plasma materials processing; scanning electron microscopy; secondary ion mass spectra; semiconductor doping; silicon; CO; CO₂; RGA; SEM cross-sectional analysis; SIMS analysis; Si:C,O,N,CO,CO₂; UV/baked photoresist wafers; UVB photoresist; bare Si; co-implantation; dopant profiles; hard-baked patterned photoresist wafers; implanted C; implanted N; implanted O; nonmass-separated ion implantation; outgassed photoresist species; outgassing effects; photoresist integrity; plasma immersion ion implantation; process compatibility; soft-baked patterned photoresist wafers; Coatings; Filtering; Implants; Ion implantation; Magnetic analysis; Magnetic separation; Plasma immersion ion implantation; Plasma measurements; Resists; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813901

Filename

813901