Title :
Using dopant activation of implanted wafers for low temperature (400°C-600°C) measurement in CVD equipment design
Author :
Borland, John O. ; Galewski, Carl
Author_Institution :
Varian Semicond. Equip., Sunnyvale, CA, USA
Abstract :
We report on a method of using dopant activation Rs measurements on implanted wafers to determine actual wafer temperature and wafer heating response in order to characterize CVD chamber/heater design. We compared boron, antimony and phosphorus dopant species and found phosphorus to work best due to good amorphization of the silicon surface after implantation with complete dopant activation after 7 minutes annealing in the CVD chamber. Activation energies between 1.5 to 2.5 eV were measured over a temperature range of 420°C to 550°C for the 3 dopant species. With this technique full wafer mapping of the wafer thermal response can be obtained for designing CVD chambers/heaters
Keywords :
annealing; antimony; boron; chemical vapour deposition; elemental semiconductors; ion implantation; phosphorus; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; temperature measurement; 400 to 600 C; 7 min; CVD chamber/heater design; CVD equipment design; Si:B; Si:P; Si:Sb; activation energies; amorphization; annealing; antimony; boron; dopant activation; dopant species; full wafer mapping; implanted wafers; phosphorus; temperature measurement; wafer heating response; wafer temperature; wafer thermal response; Annealing; Boron; Energy measurement; Heating; Implants; Silicon; Solids; Temperature distribution; Temperature measurement; Temperature sensors;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813903
