Title :
A novel p-channel dual action device for HVIC
Author :
Watabe, Kiyoto ; Akiyama, Hidenori ; Terashima, Tomohide ; Okada, Masakazu ; Nobuto, Shinji ; Yamawaki, Masao ; Asai, Sotoju
Author_Institution :
LSI Res. & Dev. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A novel lateral power device termed p-channel Dual Action Device (p-ch DAD) is proposed and demonstrated in action experimentally. The new device has successfully increased on-state current without lowering the device breakdown voltage. 600 V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment
Keywords :
MOS integrated circuits; electric breakdown; power integrated circuits; power semiconductor devices; silicon-on-insulator; 600 V; HVIC; HVMOS IC; SOI; device breakdown voltage; high-voltage IC; lateral power device; on-state current; p-channel dual action device; Anodes; Breakdown voltage; Cathodes; Circuits; Electric breakdown; Fabrication; Inverters; Laboratories; Power engineering and energy; Threshold voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647422
