DocumentCode :
349541
Title :
Monte Carlo simulation of surface smoothing effect by cluster ions
Author :
Hagiwara, Norihisa ; Toyoda, Noriaki ; Matsuo, Jiro ; Yamada, Isao
Author_Institution :
Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
Volume :
2
fYear :
1999
fDate :
36495
Firstpage :
1230
Abstract :
Cluster ion beam exhibits surface smoothing effects even for a very hard material such as diamond and TiN. From the experimental studies, it was found that the sputtering effects with cluster ions are completely different from those with monomer ions. In this work, surface smoothing mechanisms with cluster ions are studied with Monte Carlo simulations. The motions of the atoms in the cluster-ion impact were modeled and Monte Carlo simulations were performed. Since the ejected atoms move only a few nm by one cluster ion impact, the hills and valleys with high spatial frequencies are removed preferentially, and those with low spatial frequencies needs more ion doses to planarize
Keywords :
Monte Carlo methods; ion-surface impact; sputtering; C; Monte Carlo simulation; TiN; cluster ion beam; cluster-ion impact; diamond; sputtering effects; surface smoothing effect; very hard material; Argon; Frequency; Ion beams; Semiconductor device modeling; Smoothing methods; Sputtering; Superconducting films; Surface cleaning; Surface morphology; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1998.813909
Filename :
813909
Link To Document :
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