DocumentCode :
349543
Title :
Microcavities formed by hydrogen or helium plasma immersion ion implantation
Author :
Chu, Paul K. ; Cheung, Nathan W. ; Chan, Chung
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China
Volume :
2
fYear :
1999
fDate :
36495
Firstpage :
1238
Abstract :
Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess many interesting properties. For instance, they emit light similar to porous silicon, but since they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metal impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI)
Keywords :
bubbles; getters; helium; hydrogen; ion implantation; silicon-on-insulator; voids (solid); H; He; SOI; Si-SiO2; bubbles formation; internal gettering sites; metal impurities; microcavities formation; plasma immersion ion implantation; silicon-on-insulator; Helium; Hydrogen; Microcavities; Optical films; Optical materials; Particle beam optics; Plasma immersion ion implantation; Plasma properties; Silicon on insulator technology; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1998.813911
Filename :
813911
Link To Document :
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