• DocumentCode
    3495433
  • Title

    A new method to determine the temperature and the ratio of constants q/kB by a Ni-Schottky diode on 6H-SiC

  • Author

    Lang, Manfred

  • Author_Institution
    Dept. of Phys., Auburn Univ., AL, USA
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    An absolute thermometer which refers to the units can be obtained using a Ni-Schottky gate on n-type 6H-SiC. The electrical properties of the Ni-Schottky diode are reported in detail. I-V characteristics are analyzed assuming a voltage dependent ideality factor. The theory of the ideality factor theory is explained, and the application leads to a better characterization technique for the electrical properties of Schottky diodes. The temperature variation shows a new method to accurately determine the temperature by an ideality factor plot. The determination of the ratio of constants q/kB can be also made using the initial slope of the ideality factor curve according to the theory
  • Keywords
    Schottky diodes; characteristics measurement; nickel; silicon compounds; temperature distribution; temperature measurement; wide band gap semiconductors; 6H-SiC; I-V characteristics; SiC; SiC-Ni; SiC-Ni Schottky diode; absolute thermometer; electrical properties; ideality factor plot; q/kB constants ratio; temperature determination; temperature variation; voltage dependent ideality factor; Doping; Equations; Interface states; Ohmic contacts; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616479
  • Filename
    616479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3495433