Title :
A new method to determine the temperature and the ratio of constants q/kB by a Ni-Schottky diode on 6H-SiC
Author_Institution :
Dept. of Phys., Auburn Univ., AL, USA
Abstract :
An absolute thermometer which refers to the units can be obtained using a Ni-Schottky gate on n-type 6H-SiC. The electrical properties of the Ni-Schottky diode are reported in detail. I-V characteristics are analyzed assuming a voltage dependent ideality factor. The theory of the ideality factor theory is explained, and the application leads to a better characterization technique for the electrical properties of Schottky diodes. The temperature variation shows a new method to accurately determine the temperature by an ideality factor plot. The determination of the ratio of constants q/kB can be also made using the initial slope of the ideality factor curve according to the theory
Keywords :
Schottky diodes; characteristics measurement; nickel; silicon compounds; temperature distribution; temperature measurement; wide band gap semiconductors; 6H-SiC; I-V characteristics; SiC; SiC-Ni; SiC-Ni Schottky diode; absolute thermometer; electrical properties; ideality factor plot; q/kB constants ratio; temperature determination; temperature variation; voltage dependent ideality factor; Doping; Equations; Interface states; Ohmic contacts; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616479
