DocumentCode :
349546
Title :
Hydrogen free diborane ion source using 500 MHz RF discharge
Author :
Sakai, Shigeki ; Takahashi, Masato ; Tanjyo, Masayasu
Author_Institution :
High Technol. Res. & New Bus. Div., Nissin Electr. Co. Ltd., Kyoto, Japan
Volume :
2
fYear :
1999
fDate :
36495
Firstpage :
1250
Abstract :
A large area diborane ion source which can make the hydrogen ion components negligibly small is developed for the very low energy implantation. Since the ionization energy of diborane is considerably lower than that of hydrogen, we may diminish the hydrogen components by lowering the electron energy in the source plasma. With a Langmuir probe measurement, the relationships between the electron energy and the adjustable discharge parameters such as the radio frequency, RF power, magnetic field configuration have been widely examined. Using the 500 MHz radio frequency and optimizing the other parameters, we have proved experimentally that the component of the hydrogen ions becomes less than 0.1% with respect to the diborane ions
Keywords :
Langmuir probes; boron; high-frequency discharges; ion implantation; ion sources; plasma production; 500 MHz; H free diborane ion source; Langmuir probe; RF discharge; adjustable discharge parameters; electron energy; ionization energy; large area diborane ion source; magnetic field configuration; very low energy implantation; Electrons; Fault location; Hydrogen; Ion sources; Ionization; Magnetic field measurement; Plasma measurements; Plasma sources; Probes; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1998.813918
Filename :
813918
Link To Document :
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