• DocumentCode
    349546
  • Title

    Hydrogen free diborane ion source using 500 MHz RF discharge

  • Author

    Sakai, Shigeki ; Takahashi, Masato ; Tanjyo, Masayasu

  • Author_Institution
    High Technol. Res. & New Bus. Div., Nissin Electr. Co. Ltd., Kyoto, Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    1250
  • Abstract
    A large area diborane ion source which can make the hydrogen ion components negligibly small is developed for the very low energy implantation. Since the ionization energy of diborane is considerably lower than that of hydrogen, we may diminish the hydrogen components by lowering the electron energy in the source plasma. With a Langmuir probe measurement, the relationships between the electron energy and the adjustable discharge parameters such as the radio frequency, RF power, magnetic field configuration have been widely examined. Using the 500 MHz radio frequency and optimizing the other parameters, we have proved experimentally that the component of the hydrogen ions becomes less than 0.1% with respect to the diborane ions
  • Keywords
    Langmuir probes; boron; high-frequency discharges; ion implantation; ion sources; plasma production; 500 MHz; H free diborane ion source; Langmuir probe; RF discharge; adjustable discharge parameters; electron energy; ionization energy; large area diborane ion source; magnetic field configuration; very low energy implantation; Electrons; Fault location; Hydrogen; Ion sources; Ionization; Magnetic field measurement; Plasma measurements; Plasma sources; Probes; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813918
  • Filename
    813918