DocumentCode
349548
Title
Boron diffusion in ultra low-energy (<1 keV/atom) decaborane (B 10H14) ion implantation
Author
Kusaba, Takuya ; Shimada, Norihiro ; Aoki, Takaaki ; Matsuo, Jiro ; Yamada, Isao ; Goto, Kenichi ; Sugii, Toshihiro
Author_Institution
Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
Volume
2
fYear
1999
fDate
36495
Firstpage
1258
Abstract
High performance 40 nm p-MOSFETs with ultra shallow junction have been fabricated, using decaborane (B10H14) ion implantation. It has been experimentally demonstrated that ultra low-energy implantation of B10H14 in Si(100) at 2 keV does not cause the transient enhanced diffusion (TED) of boron atoms during annealing at 900°C for 10 sec. In order to reveal the diffusion mechanism of B atoms, the diffusivity of B atoms in ultra low-energy B10H14 ion implantation was measured by secondary ion mass spectroscopy (SIMS). B10H14 ions were implanted at 2, 3, 5 and 10 keV. Subsequent annealing was performed at 900°C and 1000°C for 10 sec, respectively
Keywords
MOSFET; annealing; boron compounds; diffusion; elemental semiconductors; impurity distribution; ion implantation; secondary ion mass spectra; silicon; 10 keV; 10 s; 1000 C; 2 keV; 3 keV; 5 keV; 900 C; B diffusion; SIMS; Si(100); Si:B10H14; annealing; high performance p-MOSFET; secondary ion mass spectra; ultra low-energy decaborane ion implantation; ultra shallow junction; Amorphous materials; Annealing; Atomic beams; Atomic layer deposition; Atomic measurements; Boron; Implants; Ion beams; Ion implantation; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813920
Filename
813920
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