Modelling RF interference effects in integrated circuits

Author

Whyman, N.L. ; Dawson, J.F.

Author_Institution

DERA, Farnborough, UK

Volume

2

fYear

2001

fDate

2001

Firstpage

1203

Abstract

The disturbance effects in complex electronic systems, subjected to a high power microwave (HPM), continuous wave (CW) or pulse irradiation, show a conversion of the injected high frequency (HF) out-of-band signal to a low frequency (LF) inband signal. In this paper, a behavioural model is presented that combines HF and LF subcircuits to predict the effect of radio frequency interference (RFI) on linear integrated circuits. The model is constructed from detailed measurements and manufacturers´ data, and can be used to determine the upset mechanism in analogue systems subjected to RFI

Keywords

analogue integrated circuits; frequency response; integrated circuit modelling; radiofrequency interference; transfer functions; RFI; analogue systems; complex electronic systems; continuous wave irradiation; disturbance effects; high power microwave irradiation; integrated circuits RF interference effects modelling; linear integrated circuits; out-of-band signal conversion; pulse irradiation; upset mechanism determination; Analog integrated circuits; Electromagnetic interference; Frequency conversion; Hafnium; Integrated circuit measurements; Integrated circuit modeling; Power system modeling; Predictive models; Radiofrequency integrated circuits; Radiofrequency interference;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2001. EMC. 2001 IEEE International Symposium on

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-6569-0

Type

conf

DOI

10.1109/ISEMC.2001.950603

Filename

950603