• DocumentCode
    3495592
  • Title

    A low on-resistance 60 V MOSFET high side switch and a 30 V npn transistor based on 5 V BiCMOS process

  • Author

    Kawaguchi, Yusuke ; Kinoshita, Kozo ; Nakagawa, Akio

  • Author_Institution
    Adv. Res. Lab., Toshiba Corp., Kawasaki, Japan
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    This paper present a 60 V MOSFET and a 30 V npn transistor based on a 5 V BiCMOS process. The proposed MOSFET on n-epi/n+ buried layer can be operated as high side switch, and can be fabricated with a 30 V npn. The predicted specific on-resistance of this MOSFET is as low as 105 mΩ·μm2. These device structures are suitable for fabrication by conventional BiCMOS process
  • Keywords
    BiCMOS integrated circuits; field effect transistor switches; power MOSFET; power bipolar transistors; power integrated circuits; 30 V; 5 V; 60 V; BiCMOS process; MOSFET high side switch; NPN transistor; n-epi/n+ buried layer; on-resistance; Automotive engineering; BiCMOS integrated circuits; Breakdown voltage; Fabrication; Laboratories; MOSFET circuits; Power MOSFET; Semiconductor devices; Substrates; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647423
  • Filename
    647423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3495592