Title :
Effect of two types of surface sites on the characteristics of Si 3N4-gate pH-ISFET´s
Author :
Niu, Meng-Nian ; Ding, Xin-Fang ; Tong, Qin-Yi
Author_Institution :
State Key Lab., Shanghai Inst. of Metall., China
Abstract :
Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si3N4-gate pH-ISFET are discussed. As the ratio β of silanol sites to amine sites is about 7/3, the maximum of the sensitivity of electrolyte-insulator (E-I) interfacial potential versus pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface-sites and their ratio. The theoretical results are supported by experimental results
Keywords :
MISFET; ion sensitive field effect transistors; pH measurement; semiconductor device models; sensitivity; silicon compounds; surface potential; Si-Si3N4; Si3N4-gate pH-ISFET; amine site; electrolyte-insulator interfacial potential; linear response range; pH-ISFET device stability; sensitivity; silanol site; site-binding model; surface sites; Boltzmann equation; Chemical processes; FETs; Insulation; Microelectronics; Protons; Sensor phenomena and characterization; Silicon; Stability; Surface treatment;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616480
