• DocumentCode
    3495608
  • Title

    Effect of two types of surface sites on the characteristics of Si 3N4-gate pH-ISFET´s

  • Author

    Niu, Meng-Nian ; Ding, Xin-Fang ; Tong, Qin-Yi

  • Author_Institution
    State Key Lab., Shanghai Inst. of Metall., China
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    189
  • Lastpage
    193
  • Abstract
    Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si3N4-gate pH-ISFET are discussed. As the ratio β of silanol sites to amine sites is about 7/3, the maximum of the sensitivity of electrolyte-insulator (E-I) interfacial potential versus pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface-sites and their ratio. The theoretical results are supported by experimental results
  • Keywords
    MISFET; ion sensitive field effect transistors; pH measurement; semiconductor device models; sensitivity; silicon compounds; surface potential; Si-Si3N4; Si3N4-gate pH-ISFET; amine site; electrolyte-insulator interfacial potential; linear response range; pH-ISFET device stability; sensitivity; silanol site; site-binding model; surface sites; Boltzmann equation; Chemical processes; FETs; Insulation; Microelectronics; Protons; Sensor phenomena and characterization; Silicon; Stability; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616480
  • Filename
    616480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3495608