DocumentCode :
3495708
Title :
Excitation for establishing voltage of Switched Reluctance generator at low rotor speed
Author :
Chen, Hao ; Zan, Xiaoshu ; Wang, Xing
Author_Institution :
Sch. of Inf. & Electr. Eng., China Univ. of Min. & Technol., Xuzhou, China
fYear :
2010
fDate :
16-18 June 2010
Firstpage :
378
Lastpage :
381
Abstract :
The paper introduces the developed Switched Reluctance generator system made up of Switched eluctance generator, the power converter and the singlechip microprocessor digital controller. The excitation principles are given. The controller hardware and control strategy are also presented. The experimental tests of the developed prototype had been made on the established hardware platform. The prototype can be excitated normally at 300r/min with the generation voltage being 24V. The time is 1.5s while the generation voltage is established from 0V to 24V, the generation voltage overshoot is within 7.6%, and the generation voltage ripple is within 3.1%. With the enhancing rotor speed, the time of establishing the generation voltage, the generation voltage overshoot and the generation voltage ripple are reduced. The steady voltage close-loop control of the generation voltage for Switched Reluctance generator system is achieved by variable parameters fuzzy control algorithm with PWM scheme. The conducting signals of the power converter is modulated by the PWM signal, the fuzzy control algorithm is adopted to change the duty ratio of PWM signal, and to regulate the average excitation voltage. The experimental tested results of the prototype show that establishing the generation voltage at low rotor speed is rapid, the generation voltage overshoot and the generation voltage ripple are small.
Keywords :
Fuzzy control; Pulse width modulation; Reluctance generators; Rotors; Switches; Voltage control; Switched reluctance; fuzzy control; generator; voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics for Distributed Generation Systems (PEDG), 2010 2nd IEEE International Symposium on
Conference_Location :
Hefei, China
Print_ISBN :
978-1-4244-5669-7
Type :
conf
DOI :
10.1109/PEDG.2010.5545826
Filename :
5545826
Link To Document :
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