Numerical noise model for the AlGaN/GaN HEMT

Author

Lee, Sungjae ; Webb, Kevin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., USA

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

1057

Abstract

A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green´s function approach, an equivalent of Shockley´s impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.

Keywords

Green´s function methods; III-V semiconductors; aluminium compounds; electric impedance; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; 2D numerical device solver; AlGaN-GaN; AlGaN-GaN HEMT; Green´s function approach; Shockley´s impedance field method; drain noise current sources; gate sources; intrinsic noise sources; numerical noise model; numerical simulation; spectral densities; Aluminum gallium nitride; Circuit noise; Fluctuations; Gallium nitride; HEMTs; Impedance; Noise cancellation; Noise figure; Numerical models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339166

Filename

1339166