Title :
Drie of fused silica
Author :
Zongliang Cao ; VanDerElzen, B. ; Owen, K.J. ; Jialiang Yan ; Guohong He ; Peterson, Rebecca L. ; Grimard, D. ; Najafi, Khalil
Author_Institution :
Center for Wireless Integrated Micro Sensing & Syst. (WIMS), Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This paper reports detailed characterization results of deep reactive ion etching of fused silica with three different masking materials: single-crystal Si, negative photoresist KMPR and SU-8. With an optimized etch recipe, KMPR and SU-8 show higher effective mask selectivity, are easier to integrate and remove than Si, making them better masks for creating high-aspect ratio features. Using a KMPR mask, a high aspect ratio (8:1) etch with a 6-μm mask opening is obtained. SU-8 masks also achieve high aspect ratios of 4.5:1 for 20-μm wide trenches, with mask selectivity of ~2:1. However the polymeric masks cause greater FS sidewall roughness.
Keywords :
masks; photoresists; silicon; silicon compounds; sputter etching; DRIE; SU-8 mask; SiO2; deep reactive ion etching; fused silica; high-aspect ratio features; mask selectivity; masking materials; negative photoresist KMPR mask; polymeric masks; single-crystal siluicon mask; size 20 mum; size 6 mum; Etching; Glass; Helium; Resists; Silicon; Silicon compounds;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-5654-1
DOI :
10.1109/MEMSYS.2013.6474253
