• DocumentCode
    3496256
  • Title

    The study of delta-doping concentration effect on a novel quantum-well HEMT structure

  • Author

    Cheng, Ching-Yuan ; Wang, Shui-Jinn ; Lin, Jia-Chuan ; Luo, Ying-Che

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    209
  • Lastpage
    212
  • Abstract
    In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson´s and Schrodinger´s equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed
  • Keywords
    high electron mobility transistors; semiconductor doping; semiconductor quantum wells; Poisson equation; Schrodinger equation; current density; delta doping; quantum well HEMT; transconductance; Current density; Doping; Electrons; Energy states; HEMTs; Poisson equations; Quantum wells; Structural engineering; Transconductance; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616483
  • Filename
    616483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3496256