Title :
The study of delta-doping concentration effect on a novel quantum-well HEMT structure
Author :
Cheng, Ching-Yuan ; Wang, Shui-Jinn ; Lin, Jia-Chuan ; Luo, Ying-Che
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson´s and Schrodinger´s equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed
Keywords :
high electron mobility transistors; semiconductor doping; semiconductor quantum wells; Poisson equation; Schrodinger equation; current density; delta doping; quantum well HEMT; transconductance; Current density; Doping; Electrons; Energy states; HEMTs; Poisson equations; Quantum wells; Structural engineering; Transconductance; Wave functions;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616483
