Title :
Irreversible deformation of microns thick single crystal silicon in a temperature range of 350–500°C
Author :
Sato, Kiminori ; Sugimoto, Akihiro ; Nishimura, T.
Author_Institution :
Nagoya Univ., Nagoya, Japan
Abstract :
Single crystal silicon (SCS) beam showed plastic deformation in a temperature range of 350-500°C, when it was in a size of 2-μm thick. SCS beams made from a top layer of SOI wafer were first elastically buckled by compressive force applied from free end of the beam in a longitudinal direction. Then the beams were kept at an elevated constant temperature for 1 hour in air. After releasing the applied force at room temperature, residual bent profile was evaluated using a laser profiler. Plastic hinge, i.e. localized plastic deformation, was observed for beams bent at 350-500°C but not at 300°C. We further demonstrated that a permanently deformed out-of-plane microstructure was obtained by applying hot air flow to a SCS planer film.
Keywords :
buckling; elemental semiconductors; micromechanical devices; plastic deformation; silicon; silicon-on-insulator; SCS beam; SCS planer film; SOI wafer; Si; compressive force; elastic buckling; hot air flow; irreversible micron deformation; laser profiler; localized plastic deformation; out-of-plane microstructure; plastic hinge; residual bent profile; size 2 mum; temperature 350 degC to 500 degC; thick-single-crystal silicon; Heating; Plastics; Silicon; Spirals; Strain; Structural beams; Temperature distribution;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-5654-1
DOI :
10.1109/MEMSYS.2013.6474259