Modeling on current-voltage characteristics of HgCdTe photodiodes in forward bias region

Author

Li, Yang ; Ye, Zhenhua ; Lin, Chun ; Hu, Xiaoning ; Ding, Ruijun ; He, Li

Author_Institution

Key Lab. of Infrared Imaging Mater. & Detectors, Shanghai Inst. of Tech. Phys., Shanghai, China

fYear

2012

fDate

28-31 Aug. 2012

Firstpage

19

Lastpage

20

Abstract

Current-voltage (I-V) characteristics of HgCdTe photodiodes in the forward bias region have been modeled on account of mechanisms including diffusion and recombination currents, metal-semiconductor (M-S) contact and constant series resistance. Moreover, a data processing approach has been developed to obtain valuable physical parameters from measured I-V curves. This model and algorithm have also been verified to be available and promising by the fitting results on device parameters of HgCdTe photodiodes.

Keywords

mercury compounds; photodiodes; HgCdTe; account of mechanisms; constant series resistance; current-voltage characteristics; data processing approach; diffusion; forward bias region; metal-semiconductor contact; photodiodes; recombination currents; Detectors; Electrodes; Fitting; Laser beams; Mathematical model; Photodiodes; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on

Conference_Location

Shanghai

ISSN

2158-3234

Print_ISBN

978-1-4673-1602-6

Type

conf

DOI

10.1109/NUSOD.2012.6316486

Filename

6316486