Title :
Modeling on current-voltage characteristics of HgCdTe photodiodes in forward bias region
Author :
Li, Yang ; Ye, Zhenhua ; Lin, Chun ; Hu, Xiaoning ; Ding, Ruijun ; He, Li
Author_Institution :
Key Lab. of Infrared Imaging Mater. & Detectors, Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
Current-voltage (I-V) characteristics of HgCdTe photodiodes in the forward bias region have been modeled on account of mechanisms including diffusion and recombination currents, metal-semiconductor (M-S) contact and constant series resistance. Moreover, a data processing approach has been developed to obtain valuable physical parameters from measured I-V curves. This model and algorithm have also been verified to be available and promising by the fitting results on device parameters of HgCdTe photodiodes.
Keywords :
mercury compounds; photodiodes; HgCdTe; account of mechanisms; constant series resistance; current-voltage characteristics; data processing approach; diffusion; forward bias region; metal-semiconductor contact; photodiodes; recombination currents; Detectors; Electrodes; Fitting; Laser beams; Mathematical model; Photodiodes; Resistance;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316486
