DocumentCode
3496520
Title
Simultaneous extraction of thermal and emitter series resistances in bipolar transistors
Author
Tran, H. ; Schröter, M. ; Walkey, D.J. ; Marchesan, D. ; Smy, T.J.
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fYear
1997
fDate
28-30 Sep 1997
Firstpage
170
Lastpage
173
Abstract
This paper describes a new method for simultaneous extraction of emitter and thermal resistance in bipolar transistors. The approach is verified using data generated by a compact model including self-heating and numerical simulation with lattice heating. Measured results are presented for the emitter and thermal resistances of self-aligned polysilicon devices and SiGe heterojunction devices
Keywords
bipolar transistors; digital simulation; heterojunction bipolar transistors; semiconductor device models; thermal resistance; Si; SiGe; bipolar transistors; compact model; emitter series resistances; heterojunction devices; lattice heating; numerical simulation; self-aligned polysilicon devices; self-heating; simultaneous extraction; thermal series resistances; Bipolar transistors; Data mining; Electrical resistance measurement; Germanium silicon alloys; Heating; Heterojunctions; Lattices; Numerical simulation; Silicon germanium; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3916-9
Type
conf
DOI
10.1109/BIPOL.1997.647427
Filename
647427
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