DocumentCode
3496589
Title
Characterization and fabrication of zinc oxide nanowire devices
Author
Lin, Wei-Cheng ; Lin, Yu-Chen ; Shih, Chih-Cheng ; Chu, Y.-L. ; Esashi, Masayoshi ; Seshia, Ashwin A.
Author_Institution
Nanosci. Centre, Univ. of Cambridge, Cambridge, UK
fYear
2013
fDate
20-24 Jan. 2013
Firstpage
441
Lastpage
444
Abstract
In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach. Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (HMTA, (CH2)6·N4) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing.
Keywords
nanofabrication; nanowires; voltammetry (chemical analysis); zinc compounds; UV excitation; ZnO; bottom-up synthesis approach; cyclic voltammetry; electrochemical properties; hexamethylenetetramine solution; microheaters; photoresponse; standard semiconductor processing; zinc nitrate; zinc oxide nanowire device characterization; zinc oxide nanowire device fabrication; Fabrication; Gold; Heating; Resists; Substrates; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location
Taipei
ISSN
1084-6999
Print_ISBN
978-1-4673-5654-1
Type
conf
DOI
10.1109/MEMSYS.2013.6474273
Filename
6474273
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