• DocumentCode
    3496589
  • Title

    Characterization and fabrication of zinc oxide nanowire devices

  • Author

    Lin, Wei-Cheng ; Lin, Yu-Chen ; Shih, Chih-Cheng ; Chu, Y.-L. ; Esashi, Masayoshi ; Seshia, Ashwin A.

  • Author_Institution
    Nanosci. Centre, Univ. of Cambridge, Cambridge, UK
  • fYear
    2013
  • fDate
    20-24 Jan. 2013
  • Firstpage
    441
  • Lastpage
    444
  • Abstract
    In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach. Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (HMTA, (CH2)6·N4) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing.
  • Keywords
    nanofabrication; nanowires; voltammetry (chemical analysis); zinc compounds; UV excitation; ZnO; bottom-up synthesis approach; cyclic voltammetry; electrochemical properties; hexamethylenetetramine solution; microheaters; photoresponse; standard semiconductor processing; zinc nitrate; zinc oxide nanowire device characterization; zinc oxide nanowire device fabrication; Fabrication; Gold; Heating; Resists; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
  • Conference_Location
    Taipei
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-5654-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2013.6474273
  • Filename
    6474273