DocumentCode
3496594
Title
The hybridization of plasmons in GaN-based two-dimensional channels
Author
Wang, Lin ; Hu, Weida ; Chen, Xiaoshuang ; Lu, Wei
Author_Institution
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
fYear
2012
fDate
28-31 Aug. 2012
Firstpage
29
Lastpage
30
Abstract
This paper displays the plasmon resonance phenomenon in single channel and double channel (DC) devices with varying dimensions in grating-gate period, slit and spacing between two channels in DC structures at terahertz domain. The results indicate that higher order plasmon can be excited in devices with longer period and narrow slit grating due to the enhanced coupling between plasmon and terahertz radiation. Splitting of plasmon resonance takes places in double channel device due to the hybridization between plasmons, which will improve the tunability of terahertz plasmonic device.
Keywords
aluminium compounds; diffraction gratings; gallium compounds; high electron mobility transistors; microwave photonics; optical tuning; plasmonics; plasmons; terahertz wave devices; AlyGa1-yN-GaN; GaN-based two-dimensional channels; double channel devices; double channel structures; grating-gate period; narrow slit grating; plasmon hybridization; plasmon resonance phenomenon; single channel devices; terahertz domain; terahertz plasmonic device tunability; terahertz radiation; Gratings; HEMTs; Logic gates; MODFETs; Plasma waves; Plasmons;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location
Shanghai
ISSN
2158-3234
Print_ISBN
978-1-4673-1602-6
Type
conf
DOI
10.1109/NUSOD.2012.6316491
Filename
6316491
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