• DocumentCode
    3496594
  • Title

    The hybridization of plasmons in GaN-based two-dimensional channels

  • Author

    Wang, Lin ; Hu, Weida ; Chen, Xiaoshuang ; Lu, Wei

  • Author_Institution
    Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
  • fYear
    2012
  • fDate
    28-31 Aug. 2012
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    This paper displays the plasmon resonance phenomenon in single channel and double channel (DC) devices with varying dimensions in grating-gate period, slit and spacing between two channels in DC structures at terahertz domain. The results indicate that higher order plasmon can be excited in devices with longer period and narrow slit grating due to the enhanced coupling between plasmon and terahertz radiation. Splitting of plasmon resonance takes places in double channel device due to the hybridization between plasmons, which will improve the tunability of terahertz plasmonic device.
  • Keywords
    aluminium compounds; diffraction gratings; gallium compounds; high electron mobility transistors; microwave photonics; optical tuning; plasmonics; plasmons; terahertz wave devices; AlyGa1-yN-GaN; GaN-based two-dimensional channels; double channel devices; double channel structures; grating-gate period; narrow slit grating; plasmon hybridization; plasmon resonance phenomenon; single channel devices; terahertz domain; terahertz plasmonic device tunability; terahertz radiation; Gratings; HEMTs; Logic gates; MODFETs; Plasma waves; Plasmons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
  • Conference_Location
    Shanghai
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4673-1602-6
  • Type

    conf

  • DOI
    10.1109/NUSOD.2012.6316491
  • Filename
    6316491