Title :
Fully monolithic 8 watt Ku-band high power amplifier
Author :
Zhang, Qi ; Brown, Steven A.
Author_Institution :
TriQuint Semicond., USA
Abstract :
This paper presents the design and performance of a compact MMIC high power amplifier operating at Ku-band. The amplifier was fabricated using TriQuint´s 3MI 0.25 μm pHEMT production process on 100 μm substrate. This balanced three-stage power amplifier with chip size of 11.21 mm2 (2.872 mm×3.907 mm) demonstrated 39 dBm (8 Watt) saturated output power with 22% power added efficiency from 13.5 GHz to 15 GHz and greater than 22 dB small signal gain. This HPA delivered among the best output power densities (708.5 mW/mm2) from a single MMIC chip at Ku-band reported to date.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; integrated circuit design; power integrated circuits; satellite ground stations; 0.25 micron; 100 micron; 13.5 to 15 GHz; 8 W; MMIC; high power amplifier; monolithic Ku-band high power amplifier; pHEMT; power amplifier; power densities; signal gain; Costs; FETs; High power amplifiers; MIM capacitors; MMICs; PHEMTs; Power amplifiers; Power generation; Production; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339192
