• DocumentCode
    3496609
  • Title

    Fully monolithic 8 watt Ku-band high power amplifier

  • Author

    Zhang, Qi ; Brown, Steven A.

  • Author_Institution
    TriQuint Semicond., USA
  • Volume
    2
  • fYear
    2004
  • fDate
    6-11 June 2004
  • Firstpage
    1161
  • Abstract
    This paper presents the design and performance of a compact MMIC high power amplifier operating at Ku-band. The amplifier was fabricated using TriQuint´s 3MI 0.25 μm pHEMT production process on 100 μm substrate. This balanced three-stage power amplifier with chip size of 11.21 mm2 (2.872 mm×3.907 mm) demonstrated 39 dBm (8 Watt) saturated output power with 22% power added efficiency from 13.5 GHz to 15 GHz and greater than 22 dB small signal gain. This HPA delivered among the best output power densities (708.5 mW/mm2) from a single MMIC chip at Ku-band reported to date.
  • Keywords
    HEMT integrated circuits; MMIC power amplifiers; integrated circuit design; power integrated circuits; satellite ground stations; 0.25 micron; 100 micron; 13.5 to 15 GHz; 8 W; MMIC; high power amplifier; monolithic Ku-band high power amplifier; pHEMT; power amplifier; power densities; signal gain; Costs; FETs; High power amplifiers; MIM capacitors; MMICs; PHEMTs; Power amplifiers; Power generation; Production; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2004 IEEE MTT-S International
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-8331-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.2004.1339192
  • Filename
    1339192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3496609