Title :
Numerical simulation of high-efficiency InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate
Author :
Liang, J. ; Hu, W.D. ; Chen, X.S. ; Xia, C.S. ; Cheng, L.W.
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
The structure parameters and illumination condition for InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate have been numerically studied to search the optimal point of device performance. The dependences of conversion efficiency, I-V curves, and band diagram on the structure parameters and illumination condition have been investigated. Our work shows that the performances are largely dependent on the geometric design of device and the optimal parameters are extracted.
Keywords :
III-V semiconductors; electrical conductivity; gallium arsenide; gallium compounds; indium compounds; numerical analysis; solar cells; GaAs; GaAs substrate; I-V curves; InGaP-GaAs-InGaAs; band diagram; conversion efficiency; device performance; geometric design; high-efficiency triple-junction solar cells; illumination condition; numerical simulation; structural parameters; Gallium arsenide; Indium gallium arsenide; Junctions; Lighting; Mathematical model; Performance evaluation; Photovoltaic cells;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316494
