Physical model of an optical memory cell with coupling quantum dots

Author

Fan, L. ; Guo, F.M.

Author_Institution

Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China

fYear

2012

fDate

28-31 Aug. 2012

Firstpage

57

Lastpage

58

Abstract

The physical model was founded by Crosslight Apsys software for new type of photonic memory cell based on a quantum dot (QD)-quantum well (QW) hybrid structure. The physical mechanisms involved such as interband optical transition of quantum dots. The scan conditions and iterative algorithm was also set up to finish solving. Photon storage process has well proved based on I-V curve and transient time response obtained from the model. These are crucial in the signal readout-circuit design afterward.

Keywords

optical storage; photoconductivity; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; transient response; Crosslight Apsys software; I-V curve; coupling quantum dots; interband optical transition; iterative algorithm; optical memory cell; photon storage process; photonic memory cell; physical mechanisms; physical model; quantum dot-quantum well hybrid structure; scan conditions; signal readout-circuit design; transient time response; Atom optics; Gallium arsenide; Optical buffering; Optical coupling; Optical pulses; Photonics; Quantum dots; APSYS; photon storage; physical model; quantum-dots; quantum-well;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on

Conference_Location

Shanghai

ISSN

2158-3234

Print_ISBN

978-1-4673-1602-6

Type

conf

DOI

10.1109/NUSOD.2012.6316505

Filename

6316505