DocumentCode :
3497019
Title :
Laterally actuated nanoelectromechanical relays with compliant, low resistance contact
Author :
Shavezipur, M. ; Lee, Woo Seung ; Harrison, K.L. ; Provine, J. ; Mitra, Subhasish ; Wong, H.-S Philip ; Howe, R.T.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2013
fDate :
20-24 Jan. 2013
Firstpage :
520
Lastpage :
523
Abstract :
Laterally actuated nanoelectromechanical relays with compliant source-drain contacts are presented. The relay sidewalls are coated with a 30 nm-thick conductive layer of titanium nitride (TiN) deposited using atomic layer deposition (ALD). By hollowing the tip of the relay, a flexible sidewall is formed from the thin TiN that results in a larger contact area and therefore improves the contact properties of the relay. This modification improves the on-state resistance (RON) and also provides better stability over a larger number of switching cycles compared to a rigid contact. The results of life-time tests show that the contact resistance increases with the number of switching cycles possibly due to degradation of the contact material. However, flexible contacts show improved contact resistance stability under cyclic contact.
Keywords :
atomic layer deposition; contact resistance; life testing; nanocontacts; nanoelectromechanical devices; relays; titanium compounds; ALD; atomic layer deposition; compliant low-resistance contact; compliant source-drain contacts; conductive layer; contact material degradation; contact properties; contact resistance stability improvement; cyclic contact; flexible contacts; flexible sidewall; laterally-actuated nanoelectromechanical relays; life-time tests; on-state resistance; relay sidewalls; rigid contact; switching cycles; titanium nitride; Contact resistance; Electrostatics; Force; Relays; Resistance; Switches; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
ISSN :
1084-6999
Print_ISBN :
978-1-4673-5654-1
Type :
conf
DOI :
10.1109/MEMSYS.2013.6474293
Filename :
6474293
Link To Document :
بازگشت