DocumentCode
3497019
Title
Laterally actuated nanoelectromechanical relays with compliant, low resistance contact
Author
Shavezipur, M. ; Lee, Woo Seung ; Harrison, K.L. ; Provine, J. ; Mitra, Subhasish ; Wong, H.-S Philip ; Howe, R.T.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2013
fDate
20-24 Jan. 2013
Firstpage
520
Lastpage
523
Abstract
Laterally actuated nanoelectromechanical relays with compliant source-drain contacts are presented. The relay sidewalls are coated with a 30 nm-thick conductive layer of titanium nitride (TiN) deposited using atomic layer deposition (ALD). By hollowing the tip of the relay, a flexible sidewall is formed from the thin TiN that results in a larger contact area and therefore improves the contact properties of the relay. This modification improves the on-state resistance (RON) and also provides better stability over a larger number of switching cycles compared to a rigid contact. The results of life-time tests show that the contact resistance increases with the number of switching cycles possibly due to degradation of the contact material. However, flexible contacts show improved contact resistance stability under cyclic contact.
Keywords
atomic layer deposition; contact resistance; life testing; nanocontacts; nanoelectromechanical devices; relays; titanium compounds; ALD; atomic layer deposition; compliant low-resistance contact; compliant source-drain contacts; conductive layer; contact material degradation; contact properties; contact resistance stability improvement; cyclic contact; flexible contacts; flexible sidewall; laterally-actuated nanoelectromechanical relays; life-time tests; on-state resistance; relay sidewalls; rigid contact; switching cycles; titanium nitride; Contact resistance; Electrostatics; Force; Relays; Resistance; Switches; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location
Taipei
ISSN
1084-6999
Print_ISBN
978-1-4673-5654-1
Type
conf
DOI
10.1109/MEMSYS.2013.6474293
Filename
6474293
Link To Document