• DocumentCode
    3497019
  • Title

    Laterally actuated nanoelectromechanical relays with compliant, low resistance contact

  • Author

    Shavezipur, M. ; Lee, Woo Seung ; Harrison, K.L. ; Provine, J. ; Mitra, Subhasish ; Wong, H.-S Philip ; Howe, R.T.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2013
  • fDate
    20-24 Jan. 2013
  • Firstpage
    520
  • Lastpage
    523
  • Abstract
    Laterally actuated nanoelectromechanical relays with compliant source-drain contacts are presented. The relay sidewalls are coated with a 30 nm-thick conductive layer of titanium nitride (TiN) deposited using atomic layer deposition (ALD). By hollowing the tip of the relay, a flexible sidewall is formed from the thin TiN that results in a larger contact area and therefore improves the contact properties of the relay. This modification improves the on-state resistance (RON) and also provides better stability over a larger number of switching cycles compared to a rigid contact. The results of life-time tests show that the contact resistance increases with the number of switching cycles possibly due to degradation of the contact material. However, flexible contacts show improved contact resistance stability under cyclic contact.
  • Keywords
    atomic layer deposition; contact resistance; life testing; nanocontacts; nanoelectromechanical devices; relays; titanium compounds; ALD; atomic layer deposition; compliant low-resistance contact; compliant source-drain contacts; conductive layer; contact material degradation; contact properties; contact resistance stability improvement; cyclic contact; flexible contacts; flexible sidewall; laterally-actuated nanoelectromechanical relays; life-time tests; on-state resistance; relay sidewalls; rigid contact; switching cycles; titanium nitride; Contact resistance; Electrostatics; Force; Relays; Resistance; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
  • Conference_Location
    Taipei
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-5654-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2013.6474293
  • Filename
    6474293