Randomly non-lithographic masking and MOCVD regrowth of GaN micro-hillocks to improve light emitting diode efficiencies

Author

Lee, Wei-I

Author_Institution

Professor, Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010 Taiwan

fYear

2006

fDate

Oct. 2006

Firstpage

Lastpage

Keywords

Gallium nitride; Leakage current; Light emitting diodes; MOCVD; Semiconductor materials; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication & Optoelectronic Exposition & Conference, 2006. AOE 2006. Asian

Conference_Location

Shanghai, China

Print_ISBN

978-0-9789217-0-5

Type

DOI

10.1109/AOE.2006.307363

Filename

4100069

Link To Document