Title :
Randomly non-lithographic masking and MOCVD regrowth of GaN micro-hillocks to improve light emitting diode efficiencies
Author_Institution :
Professor, Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010 Taiwan
Keywords :
Gallium nitride; Leakage current; Light emitting diodes; MOCVD; Semiconductor materials; Wet etching;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2006. AOE 2006. Asian
Conference_Location :
Shanghai, China
Print_ISBN :
978-0-9789217-0-5
DOI :
10.1109/AOE.2006.307363
