Design of low-distortion CMOS Class E power amplifier for wireless communications

Author

Tu, Steve Hung-Lung ; Toumazou, Chris

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

3

fYear

1999

fDate

1999

Firstpage

1433

Abstract

This paper describes a low-distortion Class E power amplifier which is suitable for integrated circuit implementation. Both N-type and P-type transistors are employed to achieve a balanced circuit operation thereby reducing the significant distortion of the conventional Class E power amplifier. The power amplifier operates at 1.8 GHz and is simulated with a 0.6-μm CMOS process at a supply voltage of 2.5 V

Keywords

CMOS analogue integrated circuits; SPICE; microwave power amplifiers; mobile communication; network synthesis; network topology; 0.6 mum; 1.8 GHz; 2.5 V; CMOS process; N-type and P-type transistors; P-type transistors; balanced circuit operation; distortion; integrated circuit implementation; low-distortion CMOS Class E power amplifier; supply voltage; symmetrical circuit topology; wireless communication; Band pass filters; High power amplifiers; MOSFETs; Power amplifiers; Power engineering and energy; RLC circuits; Resonance; Resonant frequency; Switches; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.814438

Filename

814438