Title :
A 1.8 GHz low-noise amplifier in CMOS/SIMOX technology
Author :
Vorwerk, Matthias ; Eggert, Dietmar
Author_Institution :
Fraunhofer Inst. for Microelectron. Circuits & Syst., Dresden, Germany
Abstract :
A low-voltage low-noise amplifier fabricated in a CMOS/SIMOX technology is presented in this paper. Due to the dielectric isolation of the transistors, high resistivity substrates can be used. This also allows the integration of inductors and capacitors with quality factors suitable for the design of RF communication circuits. The center frequency of the presented amplifier is 1.8 GHz. Operating at 2 V supply voltage, the power gain is 16 dB, with a noise figure of 3.3 dB and the 1 dB compression point related to the output of 5 dBm. The power dissipation under these conditions amounts to 24 mW
Keywords :
CMOS analogue integrated circuits; Q-factor; SIMOX; UHF amplifiers; UHF integrated circuits; equivalent circuits; integrated circuit design; integrated circuit modelling; integrated circuit noise; 1.8 GHz; 16 dB; 2 V; 24 mW; 3.3 dB; CMOS/SIMOX technology; RF communication circuit; SOI; Si; capacitors; dielectric isolation; high resistivity substrates; inductors; low-noise amplifier; low-voltage LNA; quality factors; CMOS technology; Capacitors; Circuits; Conductivity; Dielectric substrates; Inductors; Isolation technology; Low-noise amplifiers; Q factor; Radio frequency;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.814816
