DocumentCode :
3497360
Title :
Vertical junction high-efficiency concentrator photovoltaic cells
Author :
Sarfaty, Rona ; Segev, Gideon ; Pozner, Roni ; Kribus, Abraham ; Rosenwaks, Yossi
Author_Institution :
Dept. of Electr. & Electron. Eng., ORT Braude Coll., Karmiel, Israel
fYear :
2010
fDate :
17-20 Nov. 2010
Abstract :
High concentration PV systems usually prefer tandem III-V cells to Si cells, due to the much lower conversion efficiency of the latter. We re-examine the efficiency achievable with Si Vertical Multi-Junction (VMJ) cells consisting of series-connected vertical p-n junctions within a single cell. A comprehensive 2D numerical analysis of a Si vertical junction has been performed, over a wide range of design parameters and concentration levels. The results show outstanding performance potential under high concentration of 1,000 suns and higher, with efficiencies above 29% under realistic (non-ideal) assumptions. This compares to reported efficiencies of about 20% for both real cells and previous simulations using realistic assumptions. This difference may be attributed to two effects: a better representation of the active layer photoconductivity, which lowers drastically the cell´s series resistance under high concentration; and optimization of the junction dimensions without restriction due to the accepted fabrication process.
Keywords :
elemental semiconductors; numerical analysis; optimisation; p-n junctions; photoconductivity; silicon; solar cells; solar energy concentrators; 2D numerical analysis; III-V cells; Si; active layer; cell series resistance; high concentration PV systems; optimization; photoconductivity; photovoltaic cells; silicon cells; vertical multijunction cells; vertical p-n junctions; Doping; Fabrication; Junctions; Resistance; Silicon; Spontaneous emission; Sun; Concentrator photovoltaic; Edge-illuminated cell; Silicon cell; Vertical Multi-Junction cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Electronics Engineers in Israel (IEEEI), 2010 IEEE 26th Convention of
Conference_Location :
Eliat
Print_ISBN :
978-1-4244-8681-6
Type :
conf
DOI :
10.1109/EEEI.2010.5662191
Filename :
5662191
Link To Document :
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