DocumentCode :
3497391
Title :
A 170 volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation
Author :
McGregor, Joel M. ; Yindeepol, Wipawan ; DeSaints, J. ; Brown, Kevin C. ; Bashir, Rashid ; McKeown, William
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear :
1997
fDate :
28-30 Sep 1997
Firstpage :
183
Lastpage :
186
Abstract :
A high-speed, high-voltage polysilicon-emitter complementary bipolar IC process is described. Process features include >170 V NPN and PNP BVceo, dielectric isolation using a bonded wafer substrate and deep trenches, polysilicon resistors, polysilicon to metal capacitors, and a two-level metal back end
Keywords :
bipolar integrated circuits; integrated circuit technology; isolation technology; power integrated circuits; 170 V; Si; VIP-4H; bonded wafer substrate; deep trench; dielectric isolation; high-speed high-voltage circuit; polysilicon resistor; polysilicon to metal capacitor; polysilicon-emitter complementary bipolar IC technology; two-level metal back end; Bipolar integrated circuits; Boron; Capacitors; Dielectric substrates; Epitaxial layers; Etching; High speed integrated circuits; Isolation technology; Oxidation; Resistors; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-3916-9
Type :
conf
DOI :
10.1109/BIPOL.1997.647431
Filename :
647431
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3497391
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