InGaN nanorod LEDs: A performance assessment

Author

Witzigmann, Bernd ; Deppner, Marcus ; Römer, Friedhard

Author_Institution

Comput. Electron. & Photonics Group, Univ. of Kassel, Kassel, Germany

fYear

2012

fDate

28-31 Aug. 2012

Firstpage

93

Lastpage

94

Abstract

Light Emitting Diodes (LEDs) have become an attractive concept as efficient light sources. In this contribution, the electro-optical performance of Ill-nitride based core-shell nanorod LEDs is investigated by detailed simulation. In contrast to their planar counterparts, they possess increased active region area on small footprint, non-polar active regions with c-plane vertical growth, and form horizontal two-dimensional active photonic crystals for the optical extraction process.

Keywords

III-V semiconductors; electro-optical effects; gallium compounds; indium compounds; light emitting diodes; nanophotonics; nanorods; photonic crystals; wide band gap semiconductors; III-nitride; InGaN; c-plane vertical growth; core-shell nanorod LED; electro-optical performance; horizontal two-dimensional active photonic crystals; light emitting diodes; light sources; nonpolar active regions; optical extraction process; performance assessment; Geometry; Light emitting diodes; Optical polarization; Photonic crystals; Quantum well devices; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on

Conference_Location

Shanghai

ISSN

2158-3234

Print_ISBN

978-1-4673-1602-6

Type

conf

DOI

10.1109/NUSOD.2012.6316531

Filename

6316531