• DocumentCode
    3497470
  • Title

    Minimum supply voltage for sequential logic circuits in a 22nm technology

  • Author

    Chia-Hsiang Chen ; Bowman, Keith ; Augustine, Charles ; Zhengya Zhang ; Tschanz, James

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2013
  • fDate
    4-6 Sept. 2013
  • Firstpage
    181
  • Lastpage
    186
  • Abstract
    The minimum supply voltage (Vmin) is explored for sequential logic circuits by statistically simulating the impact of within-die process variations and gate-dielectric soft breakdown on data retention and hold time. As supply voltage (Vcc) scales, statistical circuit simulations demonstrate that hold time increases faster than circuit delay or cycle time, consequently the required number of min-delay buffers increases. For this reason, a new hold-time violation metric defines Vmin as the Vcc in which the hold time exceeds a target percentage of the cycle time. Simulation results in a 22nm tri-gate CMOS technology indicate a data-retention Vmin of 0.61Vnorm and a hold-time Vmin of 0.73Vnorm, where Vnorm represents a normalized voltage for the process technology node. A key insight reveals that upsizing the first clock inverter in the sequential circuit reduces the hold-time Vmin by 18% and the overall Vmin by 16%.
  • Keywords
    CMOS logic circuits; circuit simulation; clocks; delays; logic design; logic gates; sequential circuits; circuit delay; clock inverter; cycle time; data retention; gate-dielectric soft breakdown; hold time violation metric; process technology node; sequential circuit; sequential logic circuits; size 22 nm; statistical circuit simulation; tri-gate CMOS technology; voltage 0.61 V; voltage 0.73 V; within-die process variations; Clocks; Delays; Electric breakdown; Inverters; Logic gates; Sequential circuits; Transistors; Logic Vmin; data retention; gate-dielectric soft breakdown; hold time; sequential circuit; within-die variation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design (ISLPED), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-1234-6
  • Type

    conf

  • DOI
    10.1109/ISLPED.2013.6629291
  • Filename
    6629291