Title :
Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs
Author :
Jeng, S.J. ; Ahlgren, D.C. ; Berg, G.D. ; Ebersman, B. ; Freeman, G. ; Greenberg, D.R. ; Malinowski, J. ; Nguyen-Ngoc, D. ; Schonenberg, K.T. ; Stein, K.J. ; Colavito, D. ; Longstreet, M. ; Ronsheim, P. ; Subbanna, S. ; Harame, D.L.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
We have explored the process window for polysilicon resistor in the self-aligned epi-base HBT process utilizing various structure and implant conditions. We have performed a systematic study on the effects of implant energy, dosage, and polysilicon structure on the polysilicon resistor, p-i-n diode, and NPN performance. We find that the properties of this resistor can be controlled via the implant conditions, while leaving key HBT figures of merit such as fT, fmax virtually unchanged. We also demonstrate conditions resulting in a precision, low TCR resistor
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; ion implantation; resistors; semiconductor materials; silicon; NPN HBT; Si; SiGe; TCR; extrinsic base process; figure of merit; integrated SiGe HBT; ion implantation; p-i-n diode; polysilicon resistor; process window; self-aligned epi-base HBT process; Boron; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Manufacturing; Microelectronic implants; P-i-n diodes; Resistors; Silicon germanium; Surface resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647432
