DocumentCode
3497628
Title
Write intensity prediction for energy-efficient non-volatile caches
Author
Junwhan Ahn ; Sungjoo Yoo ; Kiyoung Choi
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
fYear
2013
fDate
4-6 Sept. 2013
Firstpage
223
Lastpage
228
Abstract
This paper presents a novel concept called write intensity prediction for energy-efficient non-volatile caches as well as the architecture that implements the concept. The key idea is to correlate write intensity of cache blocks with addresses of memory access instructions that incur cache misses of those blocks. The predictor keeps track of instructions that tend to load write-intensive blocks and utilizes that information to predict write intensity of blocks. Based on this concept, we propose a block placement strategy driven by write intensity prediction for SRAM/STT-RAM hybrid caches. Experimental results show that the proposed approach reduces write energy consumption by 55% on average compared to the existing hybrid cache architecture.
Keywords
SRAM chips; cache storage; integrated circuit design; SRAM; STT-RAM hybrid caches; block placement strategy; cache blocks; cache misses; energy-efficient nonvolatile caches; memory access instructions; write intensity prediction; Correlation; Energy consumption; Memory management; Nonvolatile memory; Radiation detectors; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design (ISLPED), 2013 IEEE International Symposium on
Conference_Location
Beijing
Print_ISBN
978-1-4799-1234-6
Type
conf
DOI
10.1109/ISLPED.2013.6629298
Filename
6629298
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