• DocumentCode
    3497628
  • Title

    Write intensity prediction for energy-efficient non-volatile caches

  • Author

    Junwhan Ahn ; Sungjoo Yoo ; Kiyoung Choi

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2013
  • fDate
    4-6 Sept. 2013
  • Firstpage
    223
  • Lastpage
    228
  • Abstract
    This paper presents a novel concept called write intensity prediction for energy-efficient non-volatile caches as well as the architecture that implements the concept. The key idea is to correlate write intensity of cache blocks with addresses of memory access instructions that incur cache misses of those blocks. The predictor keeps track of instructions that tend to load write-intensive blocks and utilizes that information to predict write intensity of blocks. Based on this concept, we propose a block placement strategy driven by write intensity prediction for SRAM/STT-RAM hybrid caches. Experimental results show that the proposed approach reduces write energy consumption by 55% on average compared to the existing hybrid cache architecture.
  • Keywords
    SRAM chips; cache storage; integrated circuit design; SRAM; STT-RAM hybrid caches; block placement strategy; cache blocks; cache misses; energy-efficient nonvolatile caches; memory access instructions; write intensity prediction; Correlation; Energy consumption; Memory management; Nonvolatile memory; Radiation detectors; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design (ISLPED), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-1234-6
  • Type

    conf

  • DOI
    10.1109/ISLPED.2013.6629298
  • Filename
    6629298