• DocumentCode
    3497675
  • Title

    A low-power memristive neuromorphic circuit utilizing a global/local training mechanism

  • Author

    Rose, Garrett S. ; Pino, Robinson ; Wu, Qing

  • Author_Institution
    Polytech. Inst., New York Univ., New York, NY, USA
  • fYear
    2011
  • fDate
    July 31 2011-Aug. 5 2011
  • Firstpage
    2080
  • Lastpage
    2086
  • Abstract
    As conventional CMOS technology approaches fundamental scaling limits novel nanotechnologies offer great promise for VLSI integration at nanometer scales. The memristor, or memory resistor, is a novel nanoelectronic device that holds great promise for continued scaling for emerging applications. Memristor behavior is very similar to that of the synapses necessary for realizing a neural network. In this research, we have considered circuits that leverage memristance in the realization of an artificial synapse that can be used to implement neuromorphic computing hardware. A charge sharing based neural network is described which consists of a hybrid of conventional CMOS technology and novel memristors. Results demonstrate that the circuit can be implemented with energy consumption on the order of tens of femto-joules. Furthermore, a training circuit is presented for implementing supervised learning in hardware with low area overhead.
  • Keywords
    CMOS integrated circuits; VLSI; electronic engineering computing; learning (artificial intelligence); memristors; nanoelectronics; neural nets; scaling circuits; CMOS technology; VLSI integration; fundamental scaling limits; global/local training mechanism; low-power memristive neuromorphic circuit; memory resistor; nanoelectronic device; nanotechnologies; neural network; supervised learning; Integrated circuit modeling; Logic gates; Mathematical model; Memristors; Threshold voltage; Training; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Neural Networks (IJCNN), The 2011 International Joint Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    2161-4393
  • Print_ISBN
    978-1-4244-9635-8
  • Type

    conf

  • DOI
    10.1109/IJCNN.2011.6033483
  • Filename
    6033483