DocumentCode
3498002
Title
Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties
Author
Maur, M. Auf der ; Sacconi, F. ; Carlo, A. Di
Author_Institution
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear
2012
fDate
28-31 Aug. 2012
Firstpage
95
Lastpage
96
Abstract
InGaN/GaN nanorod core-shell LEDs have shown to be very promising candidates for high efficiency lighting devices. Such nanorods can be grown in different ways, leading to different device geometry and in particular to different structures near the polar Ga- and N-face nanorod surfaces. In this work the influence of the properties of the polar surfaces on the electrical device behaviour is studied qualitatively based on a semiclassical simulation model.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanorods; semiconductor device models; InGaN-GaN; LED; core-shell nanorod; polar surface properties; semiclassical simulation model; Anodes; Gallium nitride; Nanoscale devices; Passivation; Quantum well devices; Radiative recombination; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location
Shanghai
ISSN
2158-3234
Print_ISBN
978-1-4673-1602-6
Type
conf
DOI
10.1109/NUSOD.2012.6316556
Filename
6316556
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