Title :
Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter
Author :
Kuo, J.B. ; Sim, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents two-dimensional simulation study on the accumulation-type vs. the inversion-type of an ultra-thin SOI PMOS device operating at 300 K and 77 K in terms of its subthreshold behavior and pull-up switching performance of a CMOS inverter, using low-temperature PISCES.
Keywords :
CMOS integrated circuits; SIMOX; insulated gate field effect transistors; logic gates; semiconductor device models; 300 K; 77 K; CMOS inverter; SIMOX process; Si-SiO2; accumulation type device; inversion type device; low-temperature PISCES; pull-up switching performance; semiconductor; subthreshold behavior; two-dimensional simulation; ultra-thin SOI PMOS device; CMOS process; Doping; Insulation; Inverters; MOS devices; Semiconductor films; Silicon; Temperature; Thin film devices; Transient analysis;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263596
