Study of current drive in deep sub-micrometer SOI PMOSFET´S

Author

Assaderaghi, Fariborz ; Hui, Kelvin ; Parke, Stephen ; Duster, Jon ; Ko, Ping K. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1993

fDate

1993

Firstpage

232

Lastpage

236

Abstract

Sub-quarter micrometer PMOSFET´s are fabricated on SOI films, exhibiting excellent short channel behavior low source-drain resistance, and remarkably large current drive and transconductance. For T_ox=5.5 nm, saturation transconductances of 270 mS/mm at 300 K and 350 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. Direct measurements and simulation results show that the improved current drive is due to low series resistance, forward bias body effect and the reduction of body charge effect.

Keywords

SIMOX; insulated gate field effect transistors; 270 mS/mm; 300 K; 350 mS/mm; 5.5 nm; 80 K; PISCES simulation; SIMOX substrates; Si-SiO₂; body charge effect; current drive; deep submicrometer SOI PMOSFET; forward bias body effect; saturation transconductances; series resistance; short channel behavior; source-drain resistance; Drives; Electric resistance; Immune system; Implants; Kelvin; MOSFET circuits; Semiconductor films; Silicon; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263599

Filename

263599