Title :
Discretization scheme for drift-diffusion equations with strong diffusion enhancement
Author :
Koprucki, Thomas ; Gärtner, Klaus
Author_Institution :
Weierstrass Inst. for Appl. Anal. & Stochastics, Berlin, Germany
Abstract :
Inspired by organic semiconductor models based on hopping transport introducing Gauss-Fermi integrals a nonlinear generalization of the classical Scharfetter-Gummel scheme is derived for the distribution function F(η) = 1/(exp(-η)+γ). This function provides an approximation of the Fermi-Dirac integrals of different order and restricted argument ranges. The scheme requires the solution of a nonlinear equation per edge and continuity equation to calculate the edge currents. In the current formula the density-dependent diffusion enhancement factor, resulting from the generalized Einstein relation, shows up as a weighting factor.
Keywords :
carrier density; carrier mobility; diffusion; hopping conduction; integral equations; nonlinear equations; organic semiconductors; semiconductor device models; Fermi-Dirac integrals; Gauss-Fermi integrals; carrier density; classical Scharfetter-Gummel scheme; continuity equation; density-dependent diffusion enhancement factor; discretization scheme; drift-diffusion equations; edge currents; generalized Einstein relation; hopping transport; net electron current; nonlinear equation; organic semiconductor models; weighting factor; Approximation methods; Charge carrier density; Chemicals; Distribution functions; Electric potential; Equations; Mathematical model;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316560