DocumentCode
3498101
Title
Discretization scheme for drift-diffusion equations with strong diffusion enhancement
Author
Koprucki, Thomas ; Gärtner, Klaus
Author_Institution
Weierstrass Inst. for Appl. Anal. & Stochastics, Berlin, Germany
fYear
2012
fDate
28-31 Aug. 2012
Firstpage
103
Lastpage
104
Abstract
Inspired by organic semiconductor models based on hopping transport introducing Gauss-Fermi integrals a nonlinear generalization of the classical Scharfetter-Gummel scheme is derived for the distribution function F(η) = 1/(exp(-η)+γ). This function provides an approximation of the Fermi-Dirac integrals of different order and restricted argument ranges. The scheme requires the solution of a nonlinear equation per edge and continuity equation to calculate the edge currents. In the current formula the density-dependent diffusion enhancement factor, resulting from the generalized Einstein relation, shows up as a weighting factor.
Keywords
carrier density; carrier mobility; diffusion; hopping conduction; integral equations; nonlinear equations; organic semiconductors; semiconductor device models; Fermi-Dirac integrals; Gauss-Fermi integrals; carrier density; classical Scharfetter-Gummel scheme; continuity equation; density-dependent diffusion enhancement factor; discretization scheme; drift-diffusion equations; edge currents; generalized Einstein relation; hopping transport; net electron current; nonlinear equation; organic semiconductor models; weighting factor; Approximation methods; Charge carrier density; Chemicals; Distribution functions; Electric potential; Equations; Mathematical model;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location
Shanghai
ISSN
2158-3234
Print_ISBN
978-1-4673-1602-6
Type
conf
DOI
10.1109/NUSOD.2012.6316560
Filename
6316560
Link To Document