• DocumentCode
    3498101
  • Title

    Discretization scheme for drift-diffusion equations with strong diffusion enhancement

  • Author

    Koprucki, Thomas ; Gärtner, Klaus

  • Author_Institution
    Weierstrass Inst. for Appl. Anal. & Stochastics, Berlin, Germany
  • fYear
    2012
  • fDate
    28-31 Aug. 2012
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    Inspired by organic semiconductor models based on hopping transport introducing Gauss-Fermi integrals a nonlinear generalization of the classical Scharfetter-Gummel scheme is derived for the distribution function F(η) = 1/(exp(-η)+γ). This function provides an approximation of the Fermi-Dirac integrals of different order and restricted argument ranges. The scheme requires the solution of a nonlinear equation per edge and continuity equation to calculate the edge currents. In the current formula the density-dependent diffusion enhancement factor, resulting from the generalized Einstein relation, shows up as a weighting factor.
  • Keywords
    carrier density; carrier mobility; diffusion; hopping conduction; integral equations; nonlinear equations; organic semiconductors; semiconductor device models; Fermi-Dirac integrals; Gauss-Fermi integrals; carrier density; classical Scharfetter-Gummel scheme; continuity equation; density-dependent diffusion enhancement factor; discretization scheme; drift-diffusion equations; edge currents; generalized Einstein relation; hopping transport; net electron current; nonlinear equation; organic semiconductor models; weighting factor; Approximation methods; Charge carrier density; Chemicals; Distribution functions; Electric potential; Equations; Mathematical model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
  • Conference_Location
    Shanghai
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4673-1602-6
  • Type

    conf

  • DOI
    10.1109/NUSOD.2012.6316560
  • Filename
    6316560