Title :
MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator
Author :
Hui, Yu ; Nan, Tian Xiang ; Sun, Nian X. ; Rinaldi, Matteo
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Abstract :
This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt2 ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.
Keywords :
III-V semiconductors; Q-factor; aluminium compounds; gallium compounds; iron compounds; magnetic sensors; micromechanical resonators; microsensors; nanosensors; wide band gap semiconductors; AlN-FeGaB; bilayer nanoplate resonator; electromechanical coupling coefficient; high electromechanical performances; high sensitivity MEMS resonant magnetic field sensor; magnetic field detection; nanoTesla level; quality factor; ultraminiaturized high frequency; Admittance; Frequency measurement; Magnetic field measurement; Magnetic fields; Magnetostriction; Micromechanical devices; Resonant frequency;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-5654-1
DOI :
10.1109/MEMSYS.2013.6474344
