MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator

Author

Hui, Yu ; Nan, Tian Xiang ; Sun, Nian X. ; Rinaldi, Matteo

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

fYear

2013

fDate

20-24 Jan. 2013

Firstpage

721

Lastpage

724

Abstract

This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient k_t² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.

Keywords

III-V semiconductors; Q-factor; aluminium compounds; gallium compounds; iron compounds; magnetic sensors; micromechanical resonators; microsensors; nanosensors; wide band gap semiconductors; AlN-FeGaB; bilayer nanoplate resonator; electromechanical coupling coefficient; high electromechanical performances; high sensitivity MEMS resonant magnetic field sensor; magnetic field detection; nanoTesla level; quality factor; ultraminiaturized high frequency; Admittance; Frequency measurement; Magnetic field measurement; Magnetic fields; Magnetostriction; Micromechanical devices; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on

Conference_Location

Taipei

ISSN

1084-6999

Print_ISBN

978-1-4673-5654-1

Type

conf

DOI

10.1109/MEMSYS.2013.6474344

Filename

6474344