Nearly-fully-depleted (NFD), 0.15 mu m SOI CMOS in a CBiCMOS technology

Complementary 0.15 mu m MOSFETs and double-diffused lateral BJTs have been successfully integrated in a 10-mask CBiCMOS process, by utilizing the process simplifications that are unique to thin-film SOI. The CMOS devices are built in a SIMOX silicon layer of intermediate thickness (130 nm), leading to nearly-fully-depleted (NFD) characteristics. Excellent short-channel behavior is observed down to L_eff=0.15 mu m. P+ gate, NFD-SOI PMOSFETs with t_ox=5.5 nm exhibit record high performance, with g_msat=274 mS/mm and 352 mS/mm at 300 K and 80 K, respectively. Propagation delays of 25 ps/stage and 17 ps/stage were measured on unloaded CMOS and NMOS ring oscillators, respectively, at V_dd=3.3 V and room temperature.