Title :
Linear Efficiency Load-pull Measurements on GaAs HBT versus Si BJT for EDGE and OFDM Modulation
Author :
van den Oever, L.C.M. ; Heeres, R.M. ; Jos, H.F.F.
Author_Institution :
Philips Semicond., Nijmegen
Abstract :
We measured the large-signal performance of GaAs HBT and Si BJT for 1-tone, EDGE, and OFDM excitation. We optimized loading and biasing for linear efficiency. For EDGE GaAs HBT shows a slightly higher linear efficiency than Si BJT. For OFDM both technologies reach comparable performance. This makes silicon a good alternative for linear power amplifiers in mobile communication systems
Keywords :
3G mobile communication; III-V semiconductors; OFDM modulation; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; silicon; BJT; EDGE; GaAs; HBT; OFDM modulation; RF power transistors; Si; linear efficiency load-pull measurements; Gallium arsenide; Heterojunction bipolar transistors; Laminates; Linearity; Multiaccess communication; OFDM modulation; Peak to average power ratio; Power generation; Radio frequency; Silicon; GaAs HBT; RF power transistors; efficiency; linearity; silicon bipolar transistor;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311129
