Title :
A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB
Author :
Reuter, Ralf ; Yin, Yi
Author_Institution :
RF/IF Innovation Center, Freescale Halbleiter GmbH, Munich
Abstract :
This paper presents a state-off the art low-noise SiGe-amplifier (LNA) for the frequency range from 75 up to 85 GHz integrated in a 0.18mum BiCMOS technology (John et al., 2002 and 2006). The LNA shows noise figures of about 6.2 dB at 77 GHz and simultaneously extremely high gain adjustable from nearly 0 dB up to 33 dB at 77 GHz. The possibility to fully disable the LNA completes the functionality of the presented circuit. To the knowledge of the author this combination demonstrates the best performance in noise and gain ever reported for a commercial BiCMOS process (Floyd, 2004 and 2005). Microstrip transmission lines in combination with integrated MIM capacitors are used as matching elements. The SiGe(C)-HBT demonstrates a typical maximum fT and fmax performance of approx. 200 GHz, respectively
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; low noise amplifiers; 0.18 micron; 6.2 dB; 75 to 85 GHz; BiCMOS process technology; LNA; RF circuits; SiGe; amplifier noise; integrated MIM capacitors; microstrip transmission lines; Art; BiCMOS integrated circuits; Distributed parameter circuits; Frequency; Germanium silicon alloys; Integrated circuit technology; Microstrip; Noise figure; Performance gain; Silicon germanium; RF circuits; Silicon bipolar/BiCMOS; amplifier noise;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311132
