Title :
The Effect of RF Power, Argon Pressure on Argon Spectral Lines Intensity Excited by Micro-ICP Source
Author :
Wang, Yongqing ; Song, Haijun ; Chong, Na ; Zhou, Yingchang ; Sun, Rongxia ; Chen, Wenjun
Author_Institution :
Coll. of Electron. & Informational Eng., Hebei Univ., Baoding, China
Abstract :
This paper briefly described the structure and experimental test device of micro inductively coupled plasma (micro-ICP) excitation source. Micro-ICP excitation source excited low-pressure argon and obtained plasma light source. Spectrometer detected atomic emission spectrometry (AES) spectrum of argon in scope of 690~860 nm. Experimental research on relationship between argon spectral lines intensity and radio frequency (RF) power, argon pressure of micro-ICP excitation source has been done. Experimental results show that argon spectral lines intensity enhanced markedly when RF power raised from 3 watt (W) to 10 W, the increasing trend weakened within 10~20 W, at 20~23 W achieved the maximum, above 23 W decreased and the discharge was unstable. The argon spectral lines intensity appeared two peaks, at 60 Pascal (Pa) and 230 Pa when the argon pressure increased from 10 Pa to 250 Pa, but the discharge was unstable above 160 Pa. We concluded the best working parameters scope of micro-ICP excitation source for exciting argon: RF power 10~20 W, working argon pressure 50~70 Pa after comprehensive analysis.
Keywords :
argon; high-frequency discharges; plasma diagnostics; plasma light propagation; plasma sources; Ar; argon spectral line intensity; discharge; microICP source; microinductively coupled plasma excitation source; plasma light source; power 3 W to 10 W; pressure 230 Pa; pressure 60 Pa; radiofrequency power; spectrometer detected atomic emission spectrometry; RF power; argon pressure; argon spectral lines intensity; micro-ICP excitation source;
Conference_Titel :
Optoelectronics and Image Processing (ICOIP), 2010 International Conference on
Conference_Location :
Haiko
Print_ISBN :
978-1-4244-8683-0
DOI :
10.1109/ICOIP.2010.207