• DocumentCode
    3498396
  • Title

    The Effect of RF Power, Argon Pressure on Argon Spectral Lines Intensity Excited by Micro-ICP Source

  • Author

    Wang, Yongqing ; Song, Haijun ; Chong, Na ; Zhou, Yingchang ; Sun, Rongxia ; Chen, Wenjun

  • Author_Institution
    Coll. of Electron. & Informational Eng., Hebei Univ., Baoding, China
  • Volume
    2
  • fYear
    2010
  • fDate
    11-12 Nov. 2010
  • Firstpage
    549
  • Lastpage
    551
  • Abstract
    This paper briefly described the structure and experimental test device of micro inductively coupled plasma (micro-ICP) excitation source. Micro-ICP excitation source excited low-pressure argon and obtained plasma light source. Spectrometer detected atomic emission spectrometry (AES) spectrum of argon in scope of 690~860 nm. Experimental research on relationship between argon spectral lines intensity and radio frequency (RF) power, argon pressure of micro-ICP excitation source has been done. Experimental results show that argon spectral lines intensity enhanced markedly when RF power raised from 3 watt (W) to 10 W, the increasing trend weakened within 10~20 W, at 20~23 W achieved the maximum, above 23 W decreased and the discharge was unstable. The argon spectral lines intensity appeared two peaks, at 60 Pascal (Pa) and 230 Pa when the argon pressure increased from 10 Pa to 250 Pa, but the discharge was unstable above 160 Pa. We concluded the best working parameters scope of micro-ICP excitation source for exciting argon: RF power 10~20 W, working argon pressure 50~70 Pa after comprehensive analysis.
  • Keywords
    argon; high-frequency discharges; plasma diagnostics; plasma light propagation; plasma sources; Ar; argon spectral line intensity; discharge; microICP source; microinductively coupled plasma excitation source; plasma light source; power 3 W to 10 W; pressure 230 Pa; pressure 60 Pa; radiofrequency power; spectrometer detected atomic emission spectrometry; RF power; argon pressure; argon spectral lines intensity; micro-ICP excitation source;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Image Processing (ICOIP), 2010 International Conference on
  • Conference_Location
    Haiko
  • Print_ISBN
    978-1-4244-8683-0
  • Type

    conf

  • DOI
    10.1109/ICOIP.2010.207
  • Filename
    5662257