DocumentCode
3498414
Title
Device fabrication and characteristics of surface-channel PMOSFET with WSix polycide gate using dopant drive-out technique
Author
Yu, C.H. ; Lee, K.H. ; Liu, C.T. ; Kornblit, A. ; Steiner, K.G. ; Nagy, W.J. ; Molloy, S.J.
Author_Institution
AT&T Bell Labs., Allentown, PA, USA
fYear
1993
fDate
1993
Firstpage
15
Lastpage
19
Abstract
Surface-channel PMOSFET\´s have been realized using a dopant-drive-out technique with WSix polycide gate. The advantages of this technique include (1) excellent thermal stability, (2) superior electrical device characteristics suitable for deep sub-half micron technology, (3) 10 Omega / Square Operator sheet resistance for a thin gate stack (\n\n\t\t
Keywords
CMOS integrated circuits; VLSI; annealing; insulated gate field effect transistors; ion implantation; tungsten compounds; CMOS; Si; VLSI; WSix polycide gate; deep sub-half micron technology; device fabrication; dopant drive-out technique; furnace annealing; suppression of ion-penetration effects; surface-channel PMOSFET; thermal stability; Amorphous materials; Annealing; Boron; Fabrication; Implants; MOSFET circuits; Surface resistance; Surface topography; Thermal resistance; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location
Taipei, Taiwan
ISSN
1524-766X
Print_ISBN
0-7803-0978-2
Type
conf
DOI
10.1109/VTSA.1993.263618
Filename
263618
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