Title :
Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies
Author :
de Graauw, A.J.M. ; van Bezooijen, A. ; Chanlo, C. ; den Dekker, A. ; Dijkhuis, J. ; Pramm, S. ; ten Dolle, H.K.J.
Author_Institution :
Philips Semicond., Innovation Center RF, Nijmegen
Abstract :
The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1 mm3) and low cost at acceptable performance. A power added efficiency (PAE) of 35% is demonstrated in the low band (870 MHz) for an output power of 32 dBm with the second harmonic (H2) below -40 dBm and third harmonic (H3) below -45 dBm
Keywords :
BiCMOS integrated circuits; UHF power amplifiers; analogue circuits; cellular radio; high electron mobility transistors; radiofrequency integrated circuits; silicon; 870 MHz; BiCMOS RF power amplifier chip; GSM; RF circuits; Si; analog circuits; miniaturized quad-band front-end module; organic laminate substrate; pHEMT switch die; passive integration technologies; power devices; BiCMOS integrated circuits; GSM; Laminates; PHEMTs; Power amplifiers; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Silicon; Switches; BiCMOS; RF circuits; Silicon bipolar; analog circuits; passive integration; power devices;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311136
