Title :
Turn-On Voltage Control in BSCR and LDMOS-SCR by the Local Blocking Junction Connection
Author :
Vashchenko, V.A. ; Hopper, P.J.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA
Abstract :
The problem of local ESD protection of power arrays is addressed at the device level. A wide voltage range of the pulsed dV/dt turn-on is achieved using a local blocking junction connection. The approach is experimentally validated on both examples of bipolar SCR and NLDMOS-SCR devices and implemented in a 0.5mum 24V BiCMOS process
Keywords :
BiCMOS integrated circuits; electrostatic discharge; voltage control; 0.5 micron; 24 V; BiCMOS process; ESD protection; NLDMOS-SCR devices; bipolar SCR; local blocking junction connection; power arrays; turn-on voltage control; Anodes; BiCMOS integrated circuits; Cathodes; Clamps; Electrodes; Electrostatic discharge; Protection; Silicon; Thyristors; Voltage control; ESD; Silicon bipolar/BiCMOS process technology; power devices; snapback;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311137
