ERSO short-channel IGFET model for CMOS LDD devices from long to deep-submicron channel lengths

Author

Wang, Jyh-Ren ; Lin, Pole-Shang

Author_Institution

submicron Technol. Div., Electron. Res. & Service Organ., Industrial Technol. Res. Inst., Hsin-Chu, Taiwan

fYear

1993

fDate

1993

Firstpage

34

Lastpage

37

Abstract

ESIM is developed based upon physical-oriented model for deep submicron LDD CMOS technology. The effects of bias-dependent series resistance and nonuniform channel profile and the geometry dependence of MOSFET are well specifically built into ESIM equation. The 1-st derivatives of ESIM I-V curves are always continuous for all bias regions. Therefore, ESIM can be applied to sub- mu m mixed-mode circuit simulation.

Keywords

CMOS integrated circuits; VLSI; circuit analysis computing; insulated gate field effect transistors; mixed analogue-digital integrated circuits; semiconductor device models; CMOS LDD devices; ESIM I-V curves; MOSFET; VLSI; bias-dependent series resistance; deep-submicron channel lengths; geometry dependence; long channel length; mixed-mode circuit simulation; nonuniform channel profile; physical-oriented model; short-channel IGFET model; threshold voltage model; CMOS technology; Circuit simulation; Equations; Geometry; Immune system; Industrial electronics; MOSFET circuits; Semiconductor device modeling; Solid modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263622

Filename

263622