Title :
ERSO short-channel IGFET model for CMOS LDD devices from long to deep-submicron channel lengths
Author :
Wang, Jyh-Ren ; Lin, Pole-Shang
Author_Institution :
submicron Technol. Div., Electron. Res. & Service Organ., Industrial Technol. Res. Inst., Hsin-Chu, Taiwan
Abstract :
ESIM is developed based upon physical-oriented model for deep submicron LDD CMOS technology. The effects of bias-dependent series resistance and nonuniform channel profile and the geometry dependence of MOSFET are well specifically built into ESIM equation. The 1-st derivatives of ESIM I-V curves are always continuous for all bias regions. Therefore, ESIM can be applied to sub- mu m mixed-mode circuit simulation.
Keywords :
CMOS integrated circuits; VLSI; circuit analysis computing; insulated gate field effect transistors; mixed analogue-digital integrated circuits; semiconductor device models; CMOS LDD devices; ESIM I-V curves; MOSFET; VLSI; bias-dependent series resistance; deep-submicron channel lengths; geometry dependence; long channel length; mixed-mode circuit simulation; nonuniform channel profile; physical-oriented model; short-channel IGFET model; threshold voltage model; CMOS technology; Circuit simulation; Equations; Geometry; Immune system; Industrial electronics; MOSFET circuits; Semiconductor device modeling; Solid modeling; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263622
