DocumentCode :
3498584
Title :
SiGe Profile Optimization for Improved Cryogenic Operation at High Injection
Author :
Cui, Yan ; Niu, Guofu ; Shi, Yun ; Zhu, Chendong ; Najafizadeh, Laleh ; Cressler, John D. ; Joseph, Alvin
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL
fYear :
2006
fDate :
8-10 Oct. 2006
Firstpage :
1
Lastpage :
4
Abstract :
This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and beta at high injection
Keywords :
cryogenic electronics; heterojunction bipolar transistors; optimisation; HBT device physics; SiGe; extreme environment electronics; high injection; improved cryogenic operation; semiconductor profile optimization; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Physics; Radio frequency; Semiconductor process modeling; Shape control; Silicon germanium; USA Councils; SiGe HBT device physics; SiGe profile optimization; cryogenic electronics; extreme environment electronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
ISSN :
1088-9299
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2006.311143
Filename :
4100211
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3498584
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