• DocumentCode
    3498584
  • Title

    SiGe Profile Optimization for Improved Cryogenic Operation at High Injection

  • Author

    Cui, Yan ; Niu, Guofu ; Shi, Yun ; Zhu, Chendong ; Najafizadeh, Laleh ; Cressler, John D. ; Joseph, Alvin

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., AL
  • fYear
    2006
  • fDate
    8-10 Oct. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and beta at high injection
  • Keywords
    cryogenic electronics; heterojunction bipolar transistors; optimisation; HBT device physics; SiGe; extreme environment electronics; high injection; improved cryogenic operation; semiconductor profile optimization; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Physics; Radio frequency; Semiconductor process modeling; Shape control; Silicon germanium; USA Councils; SiGe HBT device physics; SiGe profile optimization; cryogenic electronics; extreme environment electronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2006
  • Conference_Location
    Maastricht
  • ISSN
    1088-9299
  • Print_ISBN
    1-4244-0458-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2006.311143
  • Filename
    4100211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3498584